发明名称 |
Molecular beam epitaxial growth method |
摘要 |
A method of promoting evaporation of excess indium from a surface of an indium containing compound semiconductor single crystal layer during a discontinuation of a molecular beam epitaxial growth. Substantial supply of all elements for the indium containing compound semiconductor single crystal layer are stopped at least until a substrate temperature rises to a predetermined temperature of not less than an indium re-evaporation initiation temperature.
|
申请公布号 |
US6099640(A) |
申请公布日期 |
2000.08.08 |
申请号 |
US19980146102 |
申请日期 |
1998.09.03 |
申请人 |
NEC CORPORATION |
发明人 |
NEGISHI, HITOSHI |
分类号 |
C30B23/08;C30B23/02;C30B29/40;H01L21/203;H01L21/338;H01L29/778;H01L29/812;(IPC1-7):C30B23/06 |
主分类号 |
C30B23/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|