Electromigration resistant patterned metal layer gap filled with HSQ

摘要

Spacings between metal features are gap filled with HSQ without degradation of the electromigration resistance by depositing a conformal dielectric liner encapsulating the metal features before depositing the HSQ gap fill layer. Embodiments include depositing a conformal layer of a high density plasma oxide by high density plasma chemical deposition to a thickness of about 100 ANGSTROM to about 1,000 ANGSTROM .