发明名称 |
METHOD FOR MANUFACTURING MICRO INERTIAL SENSOR |
摘要 |
PURPOSE: A method for manufacturing a micro inertial sensor is provided to improve reliability and capability by processing a thick silicon joined to a glass in a high section ratio so that a measured surface and thickness becomes large, to eliminate parasitic capacitance generally caused by a silicon substrate by using glass as a substrate instead of silicon, and to reduce a manufacturing cost by a simple process using a mask. CONSTITUTION: A method for manufacturing a micro inertial sensor comprises the steps of: bonding a bulk silicon on a glass substrate; polishing the bonded bulk silicon to a desired thickness; forming an inertial sensor structure by etching the polished bulk silicon by an anisotropic etching method; forming a vacuum space by etching glass of a bottom portion of the silicon inertial sensor structure; and evaporating metal for an electrode on the entire surface of the etched chips.
|
申请公布号 |
KR20000050852(A) |
申请公布日期 |
2000.08.05 |
申请号 |
KR19990000980 |
申请日期 |
1999.01.15 |
申请人 |
SAMSUNG ELECTRO MECHANICS CO., LTD. |
发明人 |
BAEK, SEOK SUN;HA, BYUNG JU;OH, YONG SU |
分类号 |
B81C1/00;B81B3/00;G01C19/56;G01P9/04;G01P15/125;H01L29/84;(IPC1-7):H01L29/84 |
主分类号 |
B81C1/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|