发明名称 METHOD FOR MANUFACTURING MICRO INERTIAL SENSOR
摘要 PURPOSE: A method for manufacturing a micro inertial sensor is provided to improve reliability and capability by processing a thick silicon joined to a glass in a high section ratio so that a measured surface and thickness becomes large, to eliminate parasitic capacitance generally caused by a silicon substrate by using glass as a substrate instead of silicon, and to reduce a manufacturing cost by a simple process using a mask. CONSTITUTION: A method for manufacturing a micro inertial sensor comprises the steps of: bonding a bulk silicon on a glass substrate; polishing the bonded bulk silicon to a desired thickness; forming an inertial sensor structure by etching the polished bulk silicon by an anisotropic etching method; forming a vacuum space by etching glass of a bottom portion of the silicon inertial sensor structure; and evaporating metal for an electrode on the entire surface of the etched chips.
申请公布号 KR20000050852(A) 申请公布日期 2000.08.05
申请号 KR19990000980 申请日期 1999.01.15
申请人 SAMSUNG ELECTRO MECHANICS CO., LTD. 发明人 BAEK, SEOK SUN;HA, BYUNG JU;OH, YONG SU
分类号 B81C1/00;B81B3/00;G01C19/56;G01P9/04;G01P15/125;H01L29/84;(IPC1-7):H01L29/84 主分类号 B81C1/00
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