| 摘要 |
PURPOSE: A method for manufacturing gold bonding wire of a semiconductor device and material of a target is provided to give a high purity gold to a bonding wire process and a sputtering process, by a series of processing steps. CONSTITUTION: A method for manufacturing gold bonding wire of a semiconductor device and material of a target comprises the steps of: performing a whole-melting refining of gold as raw material, by using induction heating; pouring gold obtained from the foregoing refining step, into moulds having various shapes; processing the raw material to a gold bonding wire of 10 to 50 micro meters pi; and performing a heat treatment of the processed gold bonding wire.
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