| 摘要 |
PURPOSE: A step of manufacturing TFT panel is provided to solve a problems of changing in quality and illuminating a gate pole in a process of formatting a TFT panel used a bipolar (+:al ,-:cr) by using the first and second wring covering the exposure area of insulating filems. CONSTITUTION: An area of a,b,c are oxidized by permeating anodizing liquid into PDA and charge DC voltage, and then a-Si is remained at a TFT part , a wiring crossing part with patterning a-Si, and SIN on the gate is removed by patterning a-Si and as a process shown in FIG.9(e), using a step that a transparent pole is patterned and remained on the gate pole and the transparent pole covers the part of an uncovered area on the gate pole, and a connection part prevents the TFT panel from being changed in a quality.
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