| 摘要 |
PURPOSE: A method for manufacturing electrical optical device is provided to manufacture the device by using an insulated-gate field effect transistor. CONSTITUTION: A method for manufacturing electrical optical device includes following steps. At the first step, at least thin film transistor including a source region(34b), a drain region(34b;), and a channel region(34a,34a') is formed on the surface of the insulation surface. At the second step, a gate insulation layer is formed on the channel region. At the third step, a gate electrode(40,40') is formed on the channel region. At the forth step, an interlayer insulating layer(33) is formed on the thin film transistor. The interlayer insulating layer(33) is made of a non-organic material. At the fifth step, an organic resin(101) is formed on the interlayer insulating layer and the thin film transistor. At the sixth step, a pixel electrode is formed on the thin film transistor. The interlayer insulating layer is formed between the organic resin layer and the channel region of the thin film transistor. |
