| 摘要 |
PURPOSE: A power double diffused metal oxide semiconductor(DMOS) is provided to reduce body resistance under a source region by changing the structure of the source region so that the turn-on phenomenon of a parasitic bipolar transistor is controlled. CONSTITUTION: A power double diffused metal oxide semiconductor(DMOS) comprises a drift region of a first conductivity on a semiconductor substrate, a body region of a second conductivity, a source region of the first conductivity, a high density regions of the second conductivity, a drain region of a first conductivity, a gate electrode, a source electrode and a drain electrode. The body region of the second conductivity opposite to the first conductivity is formed on a predetermined region of the drift region. The source region of the first conductivity includes a second source region connecting a first source region of a loop shape with portions facing opposite to the first source region, formed on the body region. The first source region adjoins a channel region of the body region. The high density regions of the second conductivity are formed between the first source region and the second source region, in the body region. The drain region of the first conductivity is formed in a predetermined region of the drift region. The gate electrode is formed on an edge portion of the first source region and the body region by intervening an insulation layer. The source electrode is formed through a source contact exposing the second source region and the high density region of the second conductivity. The drain electrode is formed through a drain contact exposing the drain region.
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