发明名称 RF SWITCH AND METHOD THEREOF
摘要 PURPOSE: A method for manufacturing an RF switch is provided to decrease a driving voltage by reducing a gap between a upper signal electrode and a control electrode. CONSTITUTION: A method for manufacturing an RF switch comprises the steps of: evaporating an insulation layer on a substrate; forming a trench by etching the insulation layer to have a overhang; evaporating and patterning a first metal layer on the entire surface including the trench, and forming a control electrode and a lower signal electrode; forming a spacer on the entire surface including the control electrode and lower signal electrode; forming etching holes by evaporating and patterning a second metal layer on the spacer layer; and eliminating the spacer layer by dry-etching through the etching holes.
申请公布号 KR20000050594(A) 申请公布日期 2000.08.05
申请号 KR19990000578 申请日期 1999.01.12
申请人 LG ELECTRONICS INC. 发明人 KIM, GEUN HO
分类号 H01L51/00;H01L21/64;(IPC1-7):H01L21/64 主分类号 H01L51/00
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