| 摘要 |
PURPOSE: A method for manufacturing a thin film transistor for a liquid crystal display device is provided to reduce the number of mask operations. CONSTITUTION: A method for manufacturing a thin film transistor for a liquid crystal display device includes following steps. At the first step, a gate line(22), a gate electrode(26), and a gate wiring(22,24,26) are formed on an insulation substrate. At the second step, gate insulation layer, amorphous silicon layer, doped amorphous silicon layer and a metal for data wiring are evaporated on the gate wiring. At the third step, a data wiring(62,64,65) is formed by using a patterning operation. At the forth step, the doped amorphous silicon layer is removed. At the fifth step, a surfactant oxidation layer is formed on the doped amorphous silicon layer. At the sixth step, a protection layer(70) is accumulated on the surfactant oxidation layer. At the seventh step, a first and third contact windows are formed. At the eighth step, a transparent conductive layer is evaporated on the protection layer. At the ninth step, an auxiliary data pad is formed which is coupled with the data pad.
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