发明名称 METHOD FOR MANUFACTURING CAPACITOR
摘要 PURPOSE: A method for manufacturing a capacitor is provided to prevent lower electrodes of the capacitor from being electrically connected to each other through a hemispherical grain, by preventing the lower electrode of the capacitor from protruding to an upper part of a first oxidation layer. CONSTITUTION: A method for manufacturing a capacitor comprises three steps. The first step is to establish a position of a lower electrode of the capacitor, by forming an oxidation layer pattern on a substrate, and by evaporating material of the lower electrode of the capacitor on the entire surface of the oxidation layer pattern and the substrate. The second step is to form the lower electrode of the capacitor, by evaporating a mask material for forming a pattern of the lower electrode of the capacitor on the material of the lower electrode, and by patterning the material of the lower electrode of the capacitor with an etching process using the mask material as an etching mask. The third step is to expand the surface area of the lower electrode of the capacitor, by forming a hemispherical grain on the lower electrode of the capacitor after eliminating the mask material, and by eliminating the oxidation layer.
申请公布号 KR20000050729(A) 申请公布日期 2000.08.05
申请号 KR19990000799 申请日期 1999.01.14
申请人 HYUNDAI MICRO ELECTRONICS CO., LTD. 发明人 JEONG, JONG HO;SONG, YEONG JIN
分类号 H01L21/8242;(IPC1-7):H01L21/824 主分类号 H01L21/8242
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