METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE HAVING STRUCTURE OF DUAL GATE

摘要

PURPOSE: A method for manufacturing a semiconductor device having a structure of a dual gate is provided to protect a semiconductor substrate by preventing a gate oxidation layer from being deteriorated by penetration of a boron. CONSTITUTION: A method for manufacturing a semiconductor device having a structure of a dual gate comprises the steps of: forming a first insulation layer on a semiconductor substrate; forming a second insulation layer on the first insulation layer by a chemical vapor deposition(CVD) method; performing a heat treatment after ion-injecting a nitrogen to the resultant, and having the nitrogen file up in the boundary between the first insulation layer and the semiconductor substrate; eliminating the first and second insulation layers; and forming a gate insulation layer on the resultant.