PURPOSE: A method for preparing a thin film by reacting a first reactant and second reactant well is provided which gives a stoichiometric thin film having high and excellent film density. CONSTITUTION: A method comprises the steps of chemically absorbing a first reactant on a substrate by pouring the first reactant in a substrate-containing chamber; removing the first reactant which is physically absorbed on a chemically absorbed first reactant; forming a substance film by pouring gas containing an element having a large attraction to a second reactant to be provided thereafter in the chamber in which the first reactant is removed and reacting with the chemically absorbed reactant; chemically absorbing the first reactant on the substance film by pouring the first reactant in the substance film -forming chamber; removing the first reactant physically absorbed on the chemically absorbed first reactant; and forming a solid film on the substance film by pouring the second reactant in the chamber and chemical substitution of the first reactant and second reactant.
申请公布号
KR20000050481(A)
申请公布日期
2000.08.05
申请号
KR19990000396
申请日期
1999.01.11
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
LIM, JAE SOON;KIM, YEONG KWAN;LEE, JONG HO;LEE, SANG IN