FORMATION OF CONTACT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a contact of a semiconductor device having an ohmic layer of titanium silicide at a bottom of a contact hole is provided to secure an enough thickness of the ohmic layer while minimizing silicon consumption caused by titanium residue. CONSTITUTION: An interlayer dielectric(210) is formed on a semiconductor substrate(200) and then patterned to form a contact hole partly exposing the substrate(200). Next, titanium is deposited on a sidewall of the contact hole and on an exposed portion of the substrate(200) through chemical vapor deposition. Therefore, a titanium layer(300) is formed on the sidewall of the contact hole, and then a titanium silicide layer(310) is formed at a bottom of the contact hole by reaction between the deposited titanium and silicon in the substrate(200). Next, a gas including silicon is supplied to react with titanium residue, so that another titanium silicide layer(320) is additionally formed on the lower titanium silicide layer(310). Then, a titanium nitride barrier(400) is formed on overall inner surfaces of the contact hole.