CHEMICAL MECHANICAL POLISHING DEVICE AND METHOD THEREOF

摘要

PURPOSE: A chemical mechanical polishing(CMP) method of a wafer is provided to extend a cleaning period of a CMP apparatus, by cleaning slurry absorbed to a vacuum hole when a wafer chuck absorbs the wafer, with pure water after the wafer is rested on a wafer stage, so that the slurry is not hardened in the vacuum hole to block the vacuum hole. CONSTITUTION: A chemical mechanical polishing(CMP) method of a wafer comprises four steps. The first step is that a wafer chuck having a vacuum hole to absorb a wafer absorbs the wafer rested on the wafer stage. The second step is to perform the CMP method regarding the wafer absorbed on the wafer chuck. The third step is to eliminate the vacuum of the vacuum hole to make the wafer rest on the wafer stage. The fourth step is to supply pure water into the vacuum hole to eliminate the slurry induced into the vacuum hole.