MOS TRANSISTOR WITH ELEVATED SOURCE/DRAIN STRUCTURE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A MOS transistor and a manufacturing method thereof are to provide the MOS transistor having an elevated source/drain structure for preventing junction leakage current. CONSTITUTION: A MOS transistor comprises: a gate(108) on a semiconductor substrate(102) surrounded by a first spacer(110) with a gate oxide film(106) intervening therebetween; a source/drain(116) formed on the surface of the substrate at both sides of the gate; a metal silicide layer(102s) formed on the gate and the source/drain; and a second spacer(118) formed at the side walls of the metal silicide layer and on the surface of the first space. A manufacturing method thereof comprise the steps of: forming the gate on the substrate surrounded by the first spacer with the gate oxide film intervening therebetween; forming an elevated film on the substrate and the gate; forming the source/drain on the substrate; forming a second spacer at the side walls of the elevated film; and forming the metal silicide layer having been reacted with the elevated film.