MANUFACTURING SEMICONDUCTOR THIN FILM AND LASER IRRADIATOR

摘要

PROBLEM TO BE SOLVED: To obtain a high-quality polycrystalline thin film by improving a semiconductor thin film crystallizing method using a laser beam. SOLUTION: The semiconductor thin film manufacturing method comprises an anneal step of irradiating a laser beam to convert a semiconductor thin film 4 to a polycrystal after a step of forming the non-single crystal semiconductor thin film 4 on the surface of a substrate 0. In the anneal step a laser beam pulse having an emission time width of 50 ns or more from the rise to fall and a fixed sectional area is at least once irradiated to convert the semiconductor film 4 contained in an irradiating region corresponding to its sectional area en bloc to the polycrystal wherein the energy intensity of the laser beam from the rise to fall is controlled to give desired variations. This enables the polycrystal to be of a large size or to be uniformized. For irradiating the laser beam, the substrate 0 may be disposed in a non-oxidative atmosphere and heated or cooled.