| 摘要 |
PROBLEM TO BE SOLVED: To prolong the operation life of a memory cell. SOLUTION: A barrier film of a silicon nitride film 39D is set under an interlayer insulating film 39, comprising an SOG film which coats a floating gate 34 and a control gate 36, etc., so that even if H or OH contained in the SOG film diffuses, it will not be trapped by a tunnel oxide film for improved trap up rate.
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