| 摘要 |
PROBLEM TO BE SOLVED: To ensure the adhesion of the interface between a base organic insulating layer and a first conductor thin film layer and to avoid a peeling phenomenon which is accompanied with the progress of a forming process, by a method wherein the first conductor thin film layer is formed on the surface of a substrate with an exposed organic insulator layer, a second conductor thin film layer is formed on the upper layer on the first conductor thin film layer, and the second conductor thin film layer is formed into a dielectric layer by performing an anodic oxidation to the surface of the second conductor thin film layer. SOLUTION: A first conductor thin film layer 2 and a second conductor thin film layer 3 are formed on a first organic insulating layer 1. A polyimide layer is used as the layer 1, but an epoxy resin layer, a benzocyclobutene layer or the simulants of these layers may be used. As the material for the layer 2, an Al nitride or a metal, such as Ti, Nb, Zr and Hf, and moreover, some one of nitrides consisting of these metals are used. Moreover, as the material for the layer 3, a tantalum nitride is used. By performing an anodic oxidation treatment to a metal thin film laminated film formed in such a way, a tantalum pentaoxide film 4 is formed. After an anodic oxidation process is completed, an upper electrode layer 5 is formed.
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