| 摘要 |
PROBLEM TO BE SOLVED: To improve the insulating withstand voltage of a semiconductor device by installing first insulating resin in the side face of an insulating board between the end part of a conduction pattern and the end part of the insulating board and installing second insulating resin covering a base board between the end part of the insulating board and case structure. SOLUTION: The whole parts of an outer peripheral side between the end part of the conduction pattern 3b of an insulating board 3a connected to a base material 1 and the end part of the insulating board 3a is coated by high insulating voltage resin agent 4. High insulating voltage resin agent 4 is heated (150 deg.C×1 h) and cured in a high temperature tank. Conduction terminals 12 and 13 are loaded on the insulating board 3a, solder paste is heated and they are jointed. The whole surface of the base board 1 between the end part of the coated insulating board 3a and case structure 5 is covered by high voltage insulating resin agent 7. Silicon insulating gelling agent 8b is filled so that a clearance part 14 remains in the case structure 5 just below a terminal block 11 being a cover, and the degassing processing of 1 Trr×80 minutes, heating (150 deg.C×2 h)/curing are executed. |
