SEMICONDUCTOR PRESSURE SENSOR

摘要

PROBLEM TO BE SOLVED: To improve the detection sensitivity without increasing the formation area of a piezoresistance element on a semiconductor substrate as much as possible. SOLUTION: The width W1 of a curve 3 of the piezoresistance element R where the flow direction of a current is different from the direction of stress to applied pressure is made larger than the width W2 of the position (straight part 4) of the piezoresistance element R where a current flows almost in parallel to the stress. Consequently, the resistance value of the curve 3 of the piezoresistance element R where the resistance value does not vary with the stress to the applied pressure becomes small, and the resistance value variation of the piezoresistance element R to the stress is made large, without increasing the formation area of the piezoresistance element R on the semiconductor substrate as much as possible, thereby improving the detection sensitivity of the pressure.