| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device, whose electrostatic breakdown and Jules thermal breakdown are prevented by a method, wherein an electric charge which flows into the channel region of an electrostatic protective transistor is made to flow into a substrate contact. SOLUTION: A gate electrode 6, a source region 7, a drain region 8, a channel region 3, a connecting region 15, a substrate contact 4 and a substrate- connecting-region contact 5 constitute an electrostatic protective transistor which is formed on an SOI film 19 on a substrate 1. The substrate contact 4 passes through a semiconductor film 14 and an insulating film 2 on the substrate 1, so as to be connected to the substrate 1. The substrate-connection- region contact 5 connects the channel region 3 to the substrate 1.
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