| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device with which a dielectric film for forming a capacity element can be prevented from being left as an etching residue in the edge part of a wiring pattern for other non-capacitance elements and the yield of the semiconductor device be improved, in the method for a semiconductor device in which transistors such as bipolar transistors, MOS transistors, etc., and capacitance elements coexist for example. SOLUTION: An edge part SE of a wiring pattern 3 formed on a region for forming non-capacitance elements is covered with a protective film 4 made of material different from a dielectric film for forming capacitance elements, and a dielectric film is formed on a region for forming the capacitance elements and non-capacitance elements so that it covers the wiring pattern 3, and then the dielectric film is removed while leaving only the dielectric film on the region for forming the capacitance elements, and further the protective film 4 is removed and finally the edge part of the wiring pattern 3 is removed.
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