发明名称 FORMATION OF METALLIC WIRING
摘要 PROBLEM TO BE SOLVED: To facilitate removal of a reaction product generated as a result of microwave plasma etching, and also to flatten an interlayer film formed on a wiring to facilitate multi-layered wiring, by reducing generation of an improper fishbone and by processing it into a taper shape. SOLUTION: A step of microwave-etching a metallic film 2 includes a first etching step of etching the metallic film 2 with use of a ternary mixed gas of BCl3, Cl2 and CH2F2 and a subsequent second etching step of etching the metallic film 2 with use of a binary mixed gas of BCl3 and Cl2.
申请公布号 JP2000216162(A) 申请公布日期 2000.08.04
申请号 JP19990017306 申请日期 1999.01.26
申请人 SANYO ELECTRIC CO LTD 发明人 SAWARA YASUMORI;MORI SHINYA
分类号 H01L21/302;H01L21/28;H01L21/3065;H01L21/3213;(IPC1-7):H01L21/321;H01L21/306 主分类号 H01L21/302
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