| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a ferroelectirc capacitor for semiconductor element with which the characteristics of the boundary between a silicon oxide and a metal lower electrode, the metal lower electrode and a ferroelectric substance film, and the ferroelectric substance film and an upper electrode, can be improved, and leakage current is reduced so as to prevent peeling phenomenon of a thin film in the following etching step. SOLUTION: This method for manufacturing a ferroelectric capacitor includes a first step for forming a first conductive film 20 forming the lower electrode of a capacitor, a second step for forming a ferroelectric substance film 21 on the first conductive film 20, a third step for conducting a rapid heat treatment to generate a nucleus for the ferroelectric substance film 21, a fourth step for forming a second conductive film 22 forming the upper electrode of a capacitor on the ferroelectric substance film 21, a fifth step for conducting heat treatment for growing crystal grains of the ferroelectric substance film 21. |
