| 摘要 |
<p>PROBLEM TO BE SOLVED: To make it possible to form micropatterns on a mask for optical exposure with good accuracy and without degradation in throughput by inserting microspaces having a prescribed shape to the side inner by one grid spacing of third grids from the side of a third pattern, thereby forming a fourth pattern. SOLUTION: The first microspace S1 is inserted to the side lower by the one grid spacing of the third grids G3 from the upper side of the third pattern AP3 and further the second microspace S2 is inserted to the side upper by the one grid spacing of the third grids G3 from the lower side of the third pattern AP3, by which the fourth pattern AP4 is formed. At this time, the sizes of the first and second microspaces S1 and S2 are the sizes which are not resolved when the patterns are drawn on the mask for optical exposure by using an electron beam drawing device. The width h is specified to the one grid spacing component to several grid spacing components of the third grids G3. The patterns are drawn to the mask for optical exposure by using the data for drawing the patterns having the fourth pattern AP4.</p> |
