发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR LASER AND SEMICONDUCTOR LASER DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To obtain a manufacturing method of a semiconductor laser and a semiconductor laser device which can prevent stress from being applied to a projection part of a mount surface when a semiconductor laser device is prepared by mounting a semiconductor laser pellet on a silicon heat sink. SOLUTION: A semiconductor laser manufacturing method which can prevent stress from being applied to a projection part 4 of a mount surface when a semiconductor laser device is prepared by mounting a semiconductor laser.pellet on a silicon heat sink has a process for forming a semiconductor laser.epitaxial wafer having a clad layer and a light emitting part 5 and forming an active layer held by the clad layer and a process for forming a semiconductor laser wafer for making a protection film 6 thick enough to be higher than the projection part 4 of the mount surface when forming the protection film 6 at the mount surface side of a semiconductor laser pellet.
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申请公布号 |
JP2000216472(A) |
申请公布日期 |
2000.08.04 |
申请号 |
JP19990011441 |
申请日期 |
1999.01.20 |
申请人 |
NEC CORP |
发明人 |
YAMADA HIDEYUKI |
分类号 |
H01S5/00;H01S5/022;(IPC1-7):H01S5/022 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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