发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR LASER AND SEMICONDUCTOR LASER DEVICE
摘要 PROBLEM TO BE SOLVED: To obtain a manufacturing method of a semiconductor laser and a semiconductor laser device which can prevent stress from being applied to a projection part of a mount surface when a semiconductor laser device is prepared by mounting a semiconductor laser pellet on a silicon heat sink. SOLUTION: A semiconductor laser manufacturing method which can prevent stress from being applied to a projection part 4 of a mount surface when a semiconductor laser device is prepared by mounting a semiconductor laser.pellet on a silicon heat sink has a process for forming a semiconductor laser.epitaxial wafer having a clad layer and a light emitting part 5 and forming an active layer held by the clad layer and a process for forming a semiconductor laser wafer for making a protection film 6 thick enough to be higher than the projection part 4 of the mount surface when forming the protection film 6 at the mount surface side of a semiconductor laser pellet.
申请公布号 JP2000216472(A) 申请公布日期 2000.08.04
申请号 JP19990011441 申请日期 1999.01.20
申请人 NEC CORP 发明人 YAMADA HIDEYUKI
分类号 H01S5/00;H01S5/022;(IPC1-7):H01S5/022 主分类号 H01S5/00
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