FORMATION OF VIA HOLE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To form a via hole without causing increase in the electrical resistance, and in addition, to suppress the occurrence of leakage currents. SOLUTION: A first step via hole 5 is formed through an SiO2 layer, an etch-stopping layer 2, and a Cu layer 1 and a second-step via hole 6 which is stopped at the etching stopping layer 2 is formed into the layer 2 continuously from the via hole 5 by peeling a resist layer 4. Then the via holes 5 and 6 are cleaned, and a barrier film 7 is formed through sputtering. Since overetching time is shortened, a Cu-Cu connection suppresses effectively an increase in electrical resistance and prevents leakage currents.