发明名称 DYNAMIC MEMORY CAPABLE OF SELECTIVE SELF-REFRESHING FOR BANK
摘要 <p>PROBLEM TO BE SOLVED: To reduce current consumption by specifying one or a plurality of memory banks when self-refresh operation is performed thereby controlling operation of an inner voltage generating section related to the bank operation being refreshed selectively. SOLUTION: A decode section 215 decodes refresh control signals RCON1, RCON2 being fed from a refresh control section 217 in self-refresh mode to generate the first through the fourth refresh bank specifying signals PREF-1,..., PREF-4. A memory bank to be refreshed is determined by the first through the fourth refresh bank specifying signals PREF-1,..., PREF-4. In this dynamic memory, an inner voltage generating section 219-i (i=1-4) exists in each memory bank and it is enabled and driven only when self-refresh operation is performed in a corresponding memory bank.</p>
申请公布号 JP2000215665(A) 申请公布日期 2000.08.04
申请号 JP20000004014 申请日期 2000.01.12
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 SAI SHOKEN;JO TOICHI;NA JONG-SIK
分类号 G11C11/407;G11C11/403;G11C11/406;G11C11/4074;G11C16/02;(IPC1-7):G11C11/407 主分类号 G11C11/407
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