摘要 |
<p>PROBLEM TO BE SOLVED: To reduce current consumption by specifying one or a plurality of memory banks when self-refresh operation is performed thereby controlling operation of an inner voltage generating section related to the bank operation being refreshed selectively. SOLUTION: A decode section 215 decodes refresh control signals RCON1, RCON2 being fed from a refresh control section 217 in self-refresh mode to generate the first through the fourth refresh bank specifying signals PREF-1,..., PREF-4. A memory bank to be refreshed is determined by the first through the fourth refresh bank specifying signals PREF-1,..., PREF-4. In this dynamic memory, an inner voltage generating section 219-i (i=1-4) exists in each memory bank and it is enabled and driven only when self-refresh operation is performed in a corresponding memory bank.</p> |