| 摘要 |
PURPOSE: A contact forming method of a semiconductor device is to prevent a contact fail generated as a void is exposed to an upper surface of a substrate. CONSTITUTION: A first insulating film(110), a second insulating film(112), and a third insulating film(114) are deposited in this sequence on a semiconductor substrate(100) with a lower conductive region(105,108) formed thereon. A mask pattern is then formed on the third insulating film to form a contact hole. A first contact hole is then formed by etching the third insulating film and the second insulating film by using the mask pattern. The mask pattern is partially etched in its thickness. An expanded first contact hole(118a) is formed by etching the third insulating film by using the mask pattern. A second contact hole(120a,120b) are formed by etching the first insulating film by using the second insulating film as a mask to expose the lower conductive region. After removing the mask pattern, a first metal film is disposed on the entire surface of the substrate to fill the second contact holes and the expanded first contact hole. A contact plug(124a,124b) are then formed by partially removing the first metal film. A metal line(126) is formed to be electrically connected to the contact plugs by depositing and patterning a second metal film overall surface of the substrate.
|
