| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a rectifier which is suitable for adapting to a high power switching and which yields a low forward voltage drop, a superior reverse recovery property, a high current density and a reverse preventing voltage. SOLUTION: This device has an N- drift layer 50 on a N+ region 52. Many trench structures 54 and 56 are formed as recesses in the drift layer facing the N+ region and each mesa region 57 separates each pair of the trenches. Each trench structure contains conductive materials 70 and 72 in a space between oxide side walls 58, 60, 62 and 64, shallow P+ regions 66 and 68 on the trench bottom part and a trench peak part and the shallow P+ regions. Metallic layers 76 and 78 form a shot key contact 78 by contacting with the trench structures and the mesa region.</p> |
