发明名称 DEGASSING PROCESS SYSTEM IN MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a degassing process system having a good efficiency. SOLUTION: The degassing process system comprises a holder for holding a wafer 5 at a high temp. in a wafer dehydrating chamber 6 and an exhaust device 2 for degassing the wafer 5 heated at the high temp. A cryo-panel is provided between the wafer dehydrating chamber 6 and the exhaust device 2, a reductive, dehydrative or rare gas or a mixed gas thereof is inserted at a specified pressure in this chamber 6, and the wafer 5 heated at a high temp. is efficiently degassed.
申请公布号 JP2000216092(A) 申请公布日期 2000.08.04
申请号 JP19990012896 申请日期 1999.01.21
申请人 NEC CORP 发明人 KIKUTA KUNIKO
分类号 H01L21/203;C23C14/34;(IPC1-7):H01L21/203 主分类号 H01L21/203
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