| 摘要 |
PROBLEM TO BE SOLVED: To enable a thin oxide film to be stably formed and to restrain boron from being diffused from a gate electrode included in a P-type semiconductor device, by a method wherein the surface of a semiconductor layer is oxidized by steam generated by irradiating hydrogen and oxygen with electromagnetic waves, the surface of the oxide film is nitrided by irradiating nitrogen with electromagnetic waves, and the oxide film is thermally treated. SOLUTION: Hydrogen and oxygen are introduced into a processing chamber 10, microwaves generated by a magnetron 15 are introduced into the plasma generating region 10A of the processing chamber 10 to generate steam, and the surface of a silicon semiconductor substrate 20 is oxidized by the water vapor. Thereafter, nitrogen is introduced into the processing chamber 10, microwaves generated by the magnetron 15 are introduced into the plasma generating region 10A of the processing chamber 10, nitrogen molecules and nitrogen molecule ions excited by irradiation with electromagnetic waves are guided to a reaction region 10B, and the oxide film whose surface is nitrided is formed on the surface of a semiconductor layer. Then, nitrogen is continuously introduced into the processing chamber 10, and the silicon semiconductor substrate 20 is thermally treated at a temperature of, for instance, 850 deg.C.
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