发明名称 MEMORY WRITING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To shorten the time of data writing to a flash ROM by decreasing the frequency of erasure processing as much as possible. SOLUTION: The memory writing method which writes data stored in a temporary storage area to a nonvolatile memory has a process wherein data to be newly written and data stored in a nonvolatile memory area at a writing destination are temporarily saved and stored in the temporary storage area, a process wherein it is judged whether or not the nonvolatile. memory area at the writing destination can be overwritten, and a process wherein the data stored in the temporary storage area are directly written to the memory area when the nonvolatile memory area can be overwritten, and when not, the memory area is erased and then the data stored in the temporary storage area are written.</p>
申请公布号 JP2000215098(A) 申请公布日期 2000.08.04
申请号 JP19990013941 申请日期 1999.01.22
申请人 MITSUBISHI ELECTRIC CORP 发明人 TSUBOUCHI KAZUO;HAMANAKA JUNICHI
分类号 G11C16/02;G06F12/00;(IPC1-7):G06F12/00 主分类号 G11C16/02
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