| 摘要 |
PROBLEM TO BE SOLVED: To make it unnecessary to introduce a refresh cycle from the external side, prevent generation of over-head in velocity assures small power consumption and prevent reduction of polarized amount. SOLUTION: This memory device is formed of a ferroelectric material capacitor 11 holding a ferroelectric material between a couple of electrodes and a cell transistor 12 where the gate terminal is connected to a word line 30, the drain terminal to a bit line 40 and the source terminal to one electrode of the ferroelectric capacitor 11. In this case, a memory cell in which the plate line 50 is connected to the other electrode of the ferroelectric material capacitor 11 is provided with a potential compensation transistor 21 in which the gate terminal is connected to the control line 90, the drain terminal to the source terminal of the cell transistor 12, and the source terminal to the plate line 50. During the power feeding, the plate line 50 is fixed to 1/2 of the power supply level. When the memory cell is non-selected, the source terminal of the cell transistor 12 is set to 1/2 of the power supply level.
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