发明名称 |
PLASMA PROCESING APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To suppress etching of a discharge tube. SOLUTION: In a plasma processing apparatus, microwave is introduced inside a discharge tube 6 made of a dielectric substance via a waveguide 7. The microwave irradiates the process gas introduced inside the reaction tube 6 to form plasma to generate active species. The active species are transferred to a processing room through an active-species transfer tube 5 to process an object to be processed. A magnetic-field application unit 9 is provided to apply a magnetic field around the plasma generation region 8 inside the discharge tube 6 to pull the plasma away from the inside wall surface of the discharge tube 6 by utilizing the magnetic field, and etching of the discharge tube is suppressed. |
申请公布号 |
JP2000216145(A) |
申请公布日期 |
2000.08.04 |
申请号 |
JP19990015917 |
申请日期 |
1999.01.25 |
申请人 |
SHIBAURA MECHATRONICS CORP |
发明人 |
TSUGAMI YOSHIZO;MIYAMOTO TAKASHI |
分类号 |
H01L21/302;C23F4/00;H01L21/3065;H05H1/46 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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