发明名称 PLASMA PROCESING APPARATUS
摘要 PROBLEM TO BE SOLVED: To suppress etching of a discharge tube. SOLUTION: In a plasma processing apparatus, microwave is introduced inside a discharge tube 6 made of a dielectric substance via a waveguide 7. The microwave irradiates the process gas introduced inside the reaction tube 6 to form plasma to generate active species. The active species are transferred to a processing room through an active-species transfer tube 5 to process an object to be processed. A magnetic-field application unit 9 is provided to apply a magnetic field around the plasma generation region 8 inside the discharge tube 6 to pull the plasma away from the inside wall surface of the discharge tube 6 by utilizing the magnetic field, and etching of the discharge tube is suppressed.
申请公布号 JP2000216145(A) 申请公布日期 2000.08.04
申请号 JP19990015917 申请日期 1999.01.25
申请人 SHIBAURA MECHATRONICS CORP 发明人 TSUGAMI YOSHIZO;MIYAMOTO TAKASHI
分类号 H01L21/302;C23F4/00;H01L21/3065;H05H1/46 主分类号 H01L21/302
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