| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a semiconductor device at a low cost by using a common bonding agent layer for fixing a semiconductor element and leads to a heat sink. SOLUTION: A semiconductor device 10 consists of a heat sink 12, a semiconductor element 14, leads 16, and a common bonding agent layer 18 for fixing the semiconductor element 14 and the leads 16 to the heat sink 12. The bonding agent layer 18 is provided nearly all over the whole surface of the heat sink 12 and has a high thermal conductivity. Further, the bonding agent layer 18 has a three layer structure consisting of two outer bonding agent layer 24, 26 and a metal layer 28 between the outer bonding agent layers 24, 26 in order to enhance the heat radiation characteristic, Then, the semiconductor element 14 and the leads 14 are arranged on the bonding agent layer 18 and the semiconductor element 14 and the leads 14 are fixed. The semiconductor element 14 and the leads 14 can be fixed to the heat sink 12 with the bonding agent layer 18 having a common high thermal conductivity in this manner, so that the low cost semiconductor 10 can be obtained without lowering the thermal conduction characteristic. |
