| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device wherein a short channel effect is suppressed and a high speed is realized, while simplifying the manufacturing process. SOLUTION: A method of manufacturing a semiconductor device of an asymmetric LDD structure comprises the steps of forming at least a pair of gate electrodes 6 on a semiconductor substrate 1 using a resist, obliquely implanting ions for permitting formation of a first conductivity-type low concentration region 7 only in the vicinity of one gate electrode 6 using the other gate electrode 6 as a mask, where a distance a between the gate electrodes and an inclination angleθfrom the surface of the semiconductor substrate 1 are set to satisfy thanθ=t/(s-d), and ion-implanting a second conductivity-type impurity in the semiconductor substrate 1 perpendicularly thereto to convert the first conductivity-type low concentration region 7 to a second conductivity-type low concentration region 9a to form a second conductivity-type high concentration source/drain region 9.
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