| 摘要 |
PROBLEM TO BE SOLVED: To enable an interlayer insulating film to be anisotropically etched without oxidizing it by a method wherein the interlayer insulating film whose main component is organic is etched by the use of plasma of etching gas whose main component is ammonia. SOLUTION: An interlayer insulating film 2 formed of an organic film whose main component is organic or an organic/inorganic composite film whose main components are an organic component and a silica component is deposited on a semiconductor substrate 1 of silicon or the like, and a resist pattern 3 provided with an opening in a contact hole forming region or a wiring groove forming region is formed on the interlayer insulating film 2. Then, the interlayer insulating film 2 is subjected to plasma etching by the use of plasma of etching gas whose main component is ammonia gas using the resist pattern 3 as a mask, by which the interlayer insulating film 2 is patterned.
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