| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor light emitting element with a reflection film of high reflectivity. SOLUTION: A GaN based semiconductor laser element 100 is formed by laminating a low temperature buffer layer 2, an n-contact layer 3, an n-clad layer 4, an n-optical guide layer 5, an n-MQW light emitting layer 6, a p-Al0.1 Ga0.9N layer 7, a p-optical guide layer 8, a p-clad layer 9 and a p-contact layer 10 one by one on a sapphire substrate 1. A rear edge face 30 of the semiconductor laser element 100 is covered with a reflection film 33. The reflection film 33 is formed by laminating eight SiO2 films 31 and eight Si3N4 films 32 one by one and the SiO2 film 31 and the rear edge face 30 come into contact with each other.
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