| 摘要 |
PROBLEM TO BE SOLVED: To prevent the resistance of a source diffused layer from increasing by introducing an impurity to the side faces of trenches. SOLUTION: A semiconductor storage device manufacturing method includes a step of forming a resist pattern, in which a proposed source forming area is opened in a control gate wiring 7, a step of exposing trenches 3a by etching off trench isolation insulating films 3 by using the resist pattern and wiring 7 as masks, and a step of forming a source diffused layer 9a by implanting ions substantially perpendicularly into a semiconductor substrate 1, using the resist pattern and wiring 7 as masks. The method also includes a step of forming a source/drain diffused layer 9, by substantially perpendicularly implanting ions into the substrate 1 by using the wiring 7 as a mask after the resist pattern is removed, a step of forming sidewall insulating films 10 on the sidewall of the wiring 7, and a step forming a source diffused layer 9a on the side faces of the trenches 3a also by rotationally implanting ions by using the wiring 7 and insulating films 10 as masks.
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