| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method whereby, in selectively etching a polysilicon film on a lower layer film having steps to form a specified pattern, a part of the polysilicon film existing at a step region of the lower layer film can be perfectly removed and a pattern can be formed accurately with suppressing the side etching occurring at the sidewall of the pattern on the polysilicon film. SOLUTION: In an etching method of selectively etching a polysilicon film 12 on a lower layer film 11 having a step 11a to form a specified pattern on the film 12, only a step region 12a of the polysilicon film 12 are selectively etched and the polysilicon film 12 with the etched step region 12a is selectively etched to form a specified pattern on non-step regions.
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