| 摘要 |
PROBLEM TO BE SOLVED: To realize a nitride-based semiconductor element which comprises a flat end face and which can be separated easily by a cleavage and to realize its manufacturing method. SOLUTION: A GaN-based semiconductor layer 20 is grown on the face A of a sapphire substrate 1 or on a face which is tilted by 0.03 to 20 deg. in the direction of a c-axis or in a direction perpendicular to the c-axis from the face A. The sapphire substrate 1 is cleaved in a face C or a face M, and a resonator face is formed. Alternatively, a GaN-based semiconductor layer 20 is grown on the face M of a sapphire substrate 1 or on a face which is tilted by 0.03 to 20 deg. to the direction of a c-axis from the face M or to a direction perpendicular to the c-axis. The sapphire substrate 1 is cleaved in a face C or a face A. As a result, a resonator face is formed. |
