| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce the deflection distortion of the image signal of a sample and to detect the defect of the sample by matching the center of the object region on the sample radiated with a charged particle beam with the optical axis of the charged particle beam, and radiating the charged particle beam to the sample while stopping one stage and moving the other stage. SOLUTION: When the prescribed correction work by an optical microscope 4 and the preparation work such as inspection region setting are completed, a sample 9 is moved below an X stage 31 and a Y stage 32. An electron beam 19 is secondarily scanned in the X, Y directions by a scanning deflecting system 15 in the same circuit pattern as that observed by the optical microscope 4. Secondary electrons 51 are generated from an observed portion by this scanning, and second secondary electrons 52 generated by a reflector 17 are detected by a secondary electron detector 20 to obtain an electron beam image. The electron beam image has higher resolution than that of an optical image, and positioning, position correction and rotation correction can be conducted at high magnifying power and high precision.</p> |
