发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To stably supply a boosted voltage during a burn-in test without breakdown of a semiconductor element in a booster power supply circuit. SOLUTION: When a burn-in test is set, a test control signal SW is input to a booster switch control circuit 15, a Hi signal is output from an inverter 22 and nodes B, D are fixed to the Hi level. Accordingly, a transistor 32 driven with a single boosted level boosted only with an electrostatic capacitance element 34 to output a boosted voltage Vpp. Moreover, in the case of the ordinary power supply voltage Vcc, the test control signal SW is set to a Lo level and double boosted with the electrostatic capacitance elements 33, 34 and the boosted voltage Vpp can be output by turning ON the transistor 32 using the double- boosted condition.
申请公布号 JP2000215690(A) 申请公布日期 2000.08.04
申请号 JP19990016930 申请日期 1999.01.26
申请人 HITACHI LTD;HITACHI ULSI SYSTEMS CO LTD 发明人 HATANO SOICHI;KINOSHITA YOSHITAKA
分类号 G11C11/401;G01R31/28;G01R31/3185;G05F1/00;G11C11/407;G11C29/00;G11C29/06;H01L21/822;H01L27/04;(IPC1-7):G11C29/00;G01R31/318 主分类号 G11C11/401
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