发明名称 SEMICONDUCTOR CIRCUIT USING FIELD EFFECT TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To improve operation speed of a semiconductor circuit and to make the design of the circuit easier by providing a layout which can reduce the parasitic capacitance and wiring resistance of the circuit. SOLUTION: A plurality of gate poly-wirings 5 are drawn in a semiconductor circuit from one sides of rectangular fields 4, and drain wires 6 are drawn in the circuit from the opposite sides of the fields 4. Then source wiring is connected to third wiring through through-holes 7. In addition, the parasitic capacitance of a semiconductor circuit is further lowered by only forming the drain wires 6 near the end sections of the rectangular fields 4.
申请公布号 JP2000216263(A) 申请公布日期 2000.08.04
申请号 JP19990013850 申请日期 1999.01.22
申请人 NEC CORP 发明人 TAKAHASHI HIROYUKI
分类号 H01L21/761;H01L21/3205;H01L21/8238;H01L23/52;H01L27/08;H01L27/092;(IPC1-7):H01L21/823;H01L21/320 主分类号 H01L21/761
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