| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method with which an electrically superior fine contact hole can be formed. SOLUTION: A semiconductor device manufacturing method includes a step of forming lower-layer wiring 102 on a semiconductor device, a step of forming an interlayer film 103 on the wiring 102, and a step of forming upper-layer wiring 104 on the film 103. The method also includes a step of forming a first insulating film 105 on the wiring 104, a step of opening a contact hole 110, which is formed above the lower-layer wiring 102 between the adjacent upper- layer wiring 104 and 104 and reaches the first insulating film 105, and a step of depositing a second insulating film 108 on the substrate. In addition, the method also includes a step of opening a contact hole 109, which reaches the lower-layer wiring 102 by successively continuously etching back the second and first insulating films 108 and 105 by anisotropic etching.
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