| 摘要 |
PROBLEM TO BE SOLVED: To automatically set a minimum value of a gate voltage VGS at measuring VDS-IDS characteristic to make a current value to a required minimum value or more, so as not to set a current value smaller than is necessary at a measurement of VDS-IDS characteristic with an extracted MOSFET element model parameter, and to uniquely determine a model of ISIDIB to conform the model to an actual device. SOLUTION: Through calculation of a gate voltage value giving a minimum current value and a maximum current value between a drain and a source specified by figures, a voltage characteristic between a drain and a source, and a current characteristic between the drain and the source are obtained excluded by micro drain-source current to make errors in an analog circuit design simulation to an attributed value or less. A model parameter of a source current is determined, and a model parameter of a wafer current is determined to use a modeling method of extracting a source current, a wafer current, and a drain current.
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