| 摘要 |
PROBLEM TO BE SOLVED: To give good transparency, high heat resistant adhesion property, shock-resistant adhesion property and excellent durability by forming a thin film consisting of silicon nitride on a substrate by using a silazane compd. by a chemical gas phase vapor deposition method. SOLUTION: A substrate S is mounted on a lower electrode 3 in a plasma chemical gas phase vapor deposition device 1, and the chamber 2 is evacuated by a vacuum pump 5 to about <=0.1 mTorr vacuum degree in the chamber. Then a gaseous silazane compd. (such as hexamethyldisilazane) and nitrogen gas supplied from a source material supply device 7 are mixed and introduced through a source material supply nozzle 6 into the chamber 2 to control the pressure in the chamber 2 to about 10 to 200 mTorr. Specified high frequency voltage is applied from a power supply 8 to an upper electrode 4 to produce glow discharge plasma P near the opening of the source supply nozzle 6 and between the lower electrode 3 and the upper electrode in the chamber 2. A silicon nitride thin film is formed on the substrate S by the glow discharge plasma P.
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