| 摘要 |
PROBLEM TO BE SOLVED: To easily and surely form an electrode such as for grounding in a functional film by subjecting a functional film consisting of a multilayered film including a conductive layer to dry etching to remove a part of the nonconductive outermost layer film so as to locally expose a desired position of the inner conductive layer. SOLUTION: A functional film consisting of a multilayered film is formed on a glass substrate 10. The multilayered film consists of first to fourth layers 11 to 14, in which the outermost layer 14 is a nonconductive antireflection layer comprising SiO2 or the like and the inner layer 13 is a conductive layer comprising ITO or the like as a shield from electromagnetic waves. An aperture 28 of a vacuum chamber 20 having an O-ring 29 around the aperture is pressed to the upper face of the functional film, and the chamber is evacuated. Then voltage is applied on an etching electrode 22 through a supporting plate 21, while an etching gas is introduced to produce plasma 33. Thereby, the outermost layer 14 is partially etched in the area corresponding to the aperture 28. The conductive layer 13 is locally exposed and a grounding electrode is surely connected to the exposed layer. |
