COATING LIQUID FOR FORMING SILICEOUS FILM, SILICEOUS FILM AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain both a coating liquid for forming a siliceous film capable of improving the reliability of a semiconductor device by lowering the permittivity and the siliceous film and to provide the semiconductor device using the siliceous film. SOLUTION: This coating liquid for forming a siliceous film is obtained by hydrolyzing and polycondensing a silane compound represented by the formula (R1 is a 1-6C alkyl group or a 1-6C fluoroalkyl group; R2 is a 1-6C alkyl group; X is a halogen or an alkoxy group; n is an integer of 0-2). The siliceous film can be prepared by coating the top surface of a substrate with the coating liquid for forming the siliceous film, drying the coated liquid at 50-250 deg.C and then hot curing the dried film at 200-600 deg.C in a nitrogen atmosphere. The semiconductor device can be obtained by forming the siliceous film.